Fig. 3: Optical, electrical, and mechanical properties of the UTAuE. | npj Flexible Electronics

Fig. 3: Optical, electrical, and mechanical properties of the UTAuE.

From: Solution process formation of high performance, stable nanostructured transparent metal electrodes via displacement-diffusion-etch process

Fig. 3

a SEM top view image of the UTAuE. Scale bar is 200 nm. Inset is the TEM diffraction pattern of the UTAuE. b UV–Vis transmittance spectra of UTAuE/PET fabricated with 2.5 mM HAuCl4 in comparison to commercial ITO/PET. Inset is a photograph of 5 × 5 cm UTAuE/PET. c AFM topographic image of the UTAuE fabricated with 2.5 mM HAuCl4 on PET substrate. Scale bar is 5 µm. Inset is the 1 × 1 µm topographic image of the UTAuE (scale bar is 250 nm). d The R/R0 value of UTAuE/PET and ITO/PET during 1000 cycles of repeated bending at a radius of 1.5 mm. R0 refers to the initial resistance of each electrode. e The R/R0 of UTAuE/PET, ITO/PET, and AgNW/PET during the 14 days aging test under 120 °C/ 75% RH, or in 0.1 M H2SO4. f Photographs of UTAuE/PET, ITO/PET, and AgNW/PET after the Scotch Tape Test. Scotch® Flatback Masking Tape 250 (peel adhesion 8.5 N cm−1) is used for this test.

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