Fig. 1: Material characterizations of Ta-doped β-Ga2O3. | npj Flexible Electronics

Fig. 1: Material characterizations of Ta-doped β-Ga2O3.

From: High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3

Fig. 1

a The HR-TEM image of the exfoliated Ta-doped β-Ga2O3 flake. Inset: the SAED pattern of the exfoliated Ta-doped β-Ga2O3 flake. b 2D-GIXRD pattern of the Ta-doped β-Ga2O3. c The integrated 1D-GIXRD spectrum of the Ta-doped β-Ga2O3. d The transmittance spectrum of the Ta-doped β-Ga2O3 bulk single crystal. Inset: the REELS spectrum of the Ta-doped β-Ga2O3. e The UPS spectra of the Ta-doped β-Ga2O3. f The energy band diagram of the Ta-doped β-Ga2O3.

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