Fig. 3: The photoelectrical properties of the fabricated β-Ga2O3 phototransistor.
From: High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3
At 250 nm excitation wavelength. a Transfer characteristic of the device under the dark and different illumination power intensities (Pin) conditions at Vds = 1 V. b Dependence of Iph on Vg under different illumination Pin at Vds = 1 V. c The Pin dependence of Iph curve at a fixed gate voltage of −8 V and Vds = 1 V. d The Iph as a function of Pin at Vg = −8 V and Vds = 1 V. Inset: α as a function of Vg. e The corresponding Rmax and D* dependence of Pin. f PDCR and EQE values versus Pin at Vds = 1 V.
