Fig. 3: Connection of LMMN.

a Schematic representation of a transition of a multilayered LM microstructure to an LMMN film. b Corresponding SEM Images of the transition of a multilayered LM microstructure with four gallium layers (4 × LBL) before stretch (scale bar: 2 µm), stretched up to 50% strain (scale bar: 2 µm), and released from the strain (scale bar: 10 µm) from left to right. c XRD patterns of multilayered LM microstructures (1 × LBL and 3 × LBL) before and after strain. The sharp peak corresponding to the indium (101) plane (ICDD PDF Card 3065-929) decreases after strain experience. The wide peak around 35° corresponds to liquid gallium alloy. d Relative resistance response of the multilayered LM microstructure (3 × LBL) to the first ten cycles of 50% tensile strain. e XRD patterns of the LMMN films with different numbers of gallium layers (1–4 × LBL). Note that the films did not experience any strain. f Relative resistance response of LMMN films with different numbers of gallium layers (1–4 × LBL). The films experienced 50% strain before the measurement. The response of bulk LM (black curve) was calculated under the assumption of constant electrical conductivity.