Fig. 4: Characterizations of each SnO2 ETL-based flexible CsPbI3-PQD solar cells. | npj Flexible Electronics

Fig. 4: Characterizations of each SnO2 ETL-based flexible CsPbI3-PQD solar cells.

From: Completely annealing-free flexible Perovskite quantum dot solar cells employing UV-sintered Ga-doped SnO2 electron transport layers

Fig. 4

a J − V characteristics of best-performing flexible CsPbI3-PQD solar cells using various SnO2 as ETL (inset: photograph of the fabricated flexible solar cell). b In-situ relative resistance change (ΔR/R0) of each SnO2-based device (ITO/SnO2/Au) during bending test with 7.5 mm of curvature of radius (RC) (inset: after recovery from bending at various values of RC). c Normalized PCE of the flexible CsPbI3-PQD solar cell after repeated bending at RC = 7.5 mm for 500 bending cycles (inset: top-view SEM image of SnO2 film on a flexible substrate before and after bending test).

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