Fig. 3: Electromechanical considerations of MEA for 80-μm-height μETF. | npj Flexible Electronics

Fig. 3: Electromechanical considerations of MEA for 80-μm-height μETF.

From: Microelectrothermoforming (μETF): one-step versatile 3D shaping of flexible microelectronics for enhanced neural interfaces

Fig. 3

a FEA analysis for cross-sectional strain distribution within deformed gold layers during μETF, at b top, bottom, and neutral planes. c Layout of gold electrode and serpentine interconnection overlaid on transversal strain distribution. The inset represents the geometric parameters of a serpentine. d FEA-based strain distribution and e peak strain (εmax) induced on in-plane serpentines of varying line widths (w) and arc angles (θ) under εapplied = 15%. f SEM images and g line failure rates after 80-μm μETF with respect to line thickness and shape, classified by two distinct failure modes of electrode cracks and line disconnection. Scale bars: 200 μm.

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