Fig. 3: Development of flexible memristors for artificial sensory neurons.
a Photograph of the flexible memristor arrays, with an inset displaying the device configuration. b Current−voltage characteristics of the device under different compliance current (CC) conditions: 1 × 10−⁵, 4 × 10−⁵, and 9 × 10−⁵ A. c Memory retention performance of the device after programming at each CC. d Schematic illustrating the device’s operating principles, replicating neuronal functions such as short-term and long-term plasticity (STP and LTP). e Multilevel conductance states of the device in pulse operation mode. f Cycle tests under voltage sweeps, evaluating the device’s electrical endurance. g Dispersion in set and reset voltages over 50 successive cycles. h Resistive switching characteristics of the device under positive bending states for varying bending radii (rb) values: 20, 10, and 5 mm.
