Fig. 4: Piezo-IGTs enable vibration sensing with enhanced SNR. | npj Flexible Electronics

Fig. 4: Piezo-IGTs enable vibration sensing with enhanced SNR.

From: Piezoelectric ion gated organic electrochemical transistors for efficient vibration sensing and on-site amplification

Fig. 4

A Normalized drain current response of Piezo-IGTs as a function of P(VDF-TrFE) μFbs feed-rate. The mean current was calculated for 12 Piezo-IGTs (L = 5 μm, W/L = 30) with increasing μFbs feed rates (3–6 ml/h), while maintaining constant P(VDF-TrFE) film area (25 mm2) at VD = -0.6 V. B Normalized drain current response of a Piezo-IGT device (L = 5 μm, W/L = 30) at various sound intensities. The maximum differential response was observed at 70 dB. C Piezo-IGTs showing enhanced SNR for piezoelectric signals. The signal generated by the P(VDF-TrFE) μFb layer had an initial SNR of −2 dB (red), which increased to 24 dB (black) after passing through the IGT. Light red trace depicts the voltage trace derived from P(VDF-TrFE) μFb film before notch filtering is applied. Gray shades indicate instances of taping deformations. D Statistical evaluation of SNR from 100 Hz tapping on 3 different μFb film areas (10, 25 and 50 mm2) used as a standalone film (blue) and as Piezo-IGT gates (red) at VD = −0.6 V.

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