Table 1 Summary of cascade simulations using molecular dynamics across different materials relevant to the TPBAR and some other nuclear materials of interest
Reference | Material | PKA characteristics | Simulation box size | Time of simul-ation | Potential used | Key analysis |
---|---|---|---|---|---|---|
Zircaloy-4 liner and getter related | ||||||
 Di et al.156 | α-Zr under -1 to +1% tensile strain | 10 KeV PKA | 250,800 atoms/ 18 nm \(\times\) 18 nm \(\times\) 18 nm | 40 ps | Mendelev’s EAM157 with Ziegler-Biersack-Littmark (ZBL) | Defect cluster analysis, Strain effects |
 Zhou et al.21 | HCP - Zr | 1 to 80 keV | 69.8 nm \(\times\) 70.5 nm \(\times\) 68.5 nm (1.43 million atoms) | 35 ps | Mendelev’s EAM157 with ZBL | Defect evolution and cluster analysis |
 Wooding et al.163 | α-Zr | Up to 20 keV | 72 \({a}_{0}\) \(\times\) 41\(\sqrt{3}\) \({a}_{0}\) \(\times\) 35 \({c}_{0}\) 532, 360 atoms | 20 ps | many-body functions of the Finnis–Sinclair type by Ackland et al.164 | Defect evolution and cluster analysis, power-law dependence of Frenkel pairs |
 Wang et al.165 | Hcp - Zr | Up to 30 keV | 256 × 255 × 408 (Å) | 25 ps | Mendelev’s EAM157 with ZBL | Dislocation analysis, nanocrack healing due to cascades |
 Khiara et al.166 | α-Zr | 20 keV | 112 \({a}_{0}\) \(\times\) 48\(\sqrt{3}\) \({a}_{0}\) \(\times\) 64 \({c}_{0}\), 1,376,400 atoms | 100 ps | Mendelev’s EAM157 with ZBL | Dislocation unpinning due to cascades, cascades radius calculations |
 Kim et al.167 | α-Zr | 20 keV | 348,192 atoms | 20 ps | Mendelev’s EAM157 with ZBL | Effect of hydrostatic strain states on defect evolution and clusters |
 Jin et al.168 | α-Zr | 6 keV | 84.5 × 195.2 × 92.6 (Å) | 30 ps | Mendelev’s EAM157 with ZBL | Effect of [0001] symmetric tilt grain boundaries on annihilation of defects |
 Tian-Yu et al.169 | α-Zr | 1 keV | 50 × 40 × 20 cells, 160,000 atoms | - | Mendelev’s EAM157 with ZBL | Analysis of sputtered atoms, surface vacancies and adatoms due to near-surface cascades |
 Wang et al.170 | HCP Zr and ZrCu interface | 40 keV | 20 × 20 × 30 nm | 200 ps | EAM by Mendelev171 | Effect of Zr2Cu precipitate in Zr matrix, defect distribution around precipitate boundary |
 Tikhonchev et al.172 | BCC Nb-5-25%Zr in HCP Zr matrix | 20 keV | 200 × 200 × 200 (Å), 323,000 | 20 ps | Semiempirical n-body potential by Lin et al.173 | Distribution of defects in Zr matrix versus in the Nb-Zr precipitate, role of interphase boundary |
 Wang et al.174 | HCP Zr | 10 keV | 339.5 × 326.9 × 398.7 (Å), 1,905,120 atoms | 60 ps | EAM by Mendelev171 with ZBL | Role of \(\left\{10\bar{1}1\right\}\) and \(\left\{10\bar{1}2\right\}\) twin boundaries in interstitial absorption and localized deformation |
 March-Rico et al.175 | α-Zr | Up to 15 keV | 35.4 × 35.7 × 27.8 nm, 1,515,874 atoms | 100 ps | BIMD 19 EAM by Wimmer et al.176 | Interaction of cascades with δ-hydrides |
 Tian et al.177 | HCP Zr | 50 keV | 144 \({a}_{0}\) \(\times\) 84 \({b}_{0}\) \(\times\) 88 \({c}_{0}\) | 27 ps | EAM by Mendelev171 with ZBL | mechanism of basal vacancy cluster formation due to local strain during irradiation |
Ni related | ||||||
 Voskoboinikov et al.23 | Pure Ni | 5–20 keV | 2 million atoms | 20 ps | EAM potential178 with ZBL | Defect analysis, variable timestep analysis and temperature effects |
 Fullarton et al.179 | Pure Ni | 1–10 keV | 40 a × 40 a × 40 a, a = 3.52 Å | 30 ps | Defect formation and clustering near-surface and in bulk | |
 Voskoboinikov et al.182 | Pure Ni | 20 keV | 2,002,536 atoms | 100 ps | EAM potential by Mishin et al.178 | Comparison of defect evolution due to surface cascades versus bulk |
 Zarkadoula et al.27 | Pure Ni | 150 keV | 600 × 600 × 600 (Å), 20 million atoms | 70 ps | embedded-atom (EAM) potential by Bonny et al.141 for Ni-Fe-Cr alloys | effects of the e-ph coupling strength and the electronic thermal conductivity on Ni cascades |
 Chen et al.183 | Pure Ni | Up to 30 keV | 445.6 × 299 × 293.5 (Å), 3,573,000 atoms | 25 ps | EAM by Mishin et al.178 with ZBL | Effect of cascades on closure of nano-cracks |
 Huang et al.184 | Ni-graphene nanocomposite | Up to 10 keV | 124.6 × 129.5 × 174.5 (Å), 285,000 atoms | 23 ps | EAM potential by Bonny et al.141 for Ni-Ni, AIREBO by Stuart for C-C185 and Lennard-Jones for C-Ni186 | High sink efficiency of Ni-graphene interface for irradiation defects annealing |
 Do et al.22 | CoCrFeMnNi HEA, Pure Ni, Pure Fe | 10 keV | 50 a\(\times\) 50 a \(\times\) 50 a, 500,000 atoms | 5000 ps | modified embedded atom method (MEAM) potential187 | Defect evolution and distribution, dislocation extraction analysis |
 Beland et al.19 | Ni, NiFe and NiCo alloys | Upto 40 keV | 2 million | 35 ps | Defect analysis and potential comparison | |
 Crocombette et al.188 | Ni3Al and UO2 | 580 keV | – | 100 ps | Cell molecular dynamics for cascades | |
 Deluigi et al.20 | FeNiCrCoCu HEA, pure Ni and pure W. | 40 keV | 1 million atoms | 100 ps | EAM potentials190 with ZBL | Defect analysis and effect of PKA type |
Lithium aluminate pellet related | ||||||
 Roy et al.13 | LiAlO2 and LiAl5O8 | 5–15 keV | 21 a × 21 a × 21 a, 225,000 atoms | 20 ps | Defect analysis, cation exchange analysis, core-shell model analysis | |
Cladding 316 Stainless steel related | ||||||
 Collette et al.142 | Fe-10Ni-20Cr (SS 316 L) | 5–15 keV | 100a\(\times\) 80\(a\times\) 160a, a = 3.59 Å, 7,680,000 atoms | 100 ps | Finnis-Sinclair embedded atom model (EAM) developed by Bonny et al.141 | Effect of dislocations on defect evolution during cascades, defect cluster analysis |
 Tikhonchev et al.191 | Fe–9 at.%Cr binary alloy | 20 keV | 19 nm \(\times\) 19 nm \(\times\) 19 nm | 25 ps | concentration dependent N-body potential192 | Defect analysis, characteristic of Cr rich clusters |
 Kedharnath et al.193 | \(\alpha\)-Fe | 3 keV | 30 nm \(\times\) 30 nm \(\times\) 14 nm (2 million atoms) | 150 ps | EAM potential by Mendelev et al.194 | Grain boundary interaction with cascades, effect of radiation on tensile properties |
 Peng et al.195 | Bcc iron | Up to 200 keV | 480 a\(\times\) 480 a \(\times\) 480 a, 137.8 nm side length cube, 221 million atoms | 40 ps | EAM potential by Bonny et al.196 with ZBL | Punch out mechanism and formation of both interstitial and vacancy dislocation loops |
 Lin et al.197 | F321 austenitic steel represented by Fe-Ni-Cr | Up to 100 keV | 25 nm \(\times\) 25 nm \(\times\) 25 nm | 150 ps | EAM potential by ref. 20 with ZBL | Defect evolution with dislocation loops analysis |
 Juslin and Nordlund198 | He in Ferritic/ martensitic steel represented by Fe90Cr10 | 5 keV | 42 a\(\times\) 42 a \(\times\) 42 a, 148,176 atoms | 25 ps | Fe-Cr by Olsson et al.199, Fe-He by Juslin200, Cr-He by Terentyev201 | Impact of He atoms in reducing the recombination in FeCr |
 Henriksson et al.202 | Fe3C and Cr23C6 in Ferritic steel (Fe-Cr-C) | 1 keV | 158,000 atoms | 50 ps | Many body potential for Fe-Cr-C system by Henriksson et al.203 | Increase in damage when recoil is initiated inside Fe3C or Cr23C6 particles in ferrite |
 Gang et al.204 | Ferritic/ martensitic steel Fe90%-Cr10% | 15 keV | 500,000 atoms | 20 ps | Fe-Cr by Olsson et al.199 | Defect evolution and clustering, Fe-Cr dumbbell formation |
Other materials of interest in the field of nuclear materials | ||||||
 Jay et al.31 | Si in diamond-like crystals | Upto 100 KeV PKA | 1 million atoms | 1000 ps | Stillinger Weber205 | Two temperature model for electronic stopping, Defect clustering |
 Borodin et al.30 | Si | Upto 5 keV | 20 nm \(\times\) 20 nm \(\times\) 20 nm | 5500 ps | Tersoff206 with ZBL | Defect analysis |
 Delaye et al.207 | SiO2–B2O3–Na2O glass | 0.6 KeV | 8000 atoms | – | Evolution of bond angle, densification | |
 Samolyuk et al.32 | Cubic phase of SiC(3C-SiC) | Up to 50 keV | 150 a\(\times\) 150 a \(\times\) 150 a, 22 million atoms | 20 ps | comparison of radiation damage using the two potentials | |
 Balboa et al.210 | (U1-yPuy)O2 | 5–75 keV PKA | 38 nm \(\times\) 38 nm \(\times\) 38 nm | 50 ps | Potashnikov pair potentials211 and Cooper many body potential212 | Cooper and Potashnikov potentials were compared for defect clustering and dislocation density |
 Martin et al.213 | UO2 | 10 keV | 187,500 atoms | 30 ps | Empirical potential (Buckingham) by Morelon et al.134 | Temperature dependence of radiation damage, cascade overlap study |
 Martin et al.214 | UO2 | 1–80 keV | 68 a\(\times\) 68 a \(\times\) 68 a, 3.8 \(\times\) 106 atoms | 20 ps | Empirical potential (Buckingham) by Morelon et al.134 | Defect and recombination analysis, damage volume analysis |
 Buchan et al.37 | Diamond | 2.5 keV | 10 nm \(\times\) 10 nm \(\times\) 10 nm | 1 ps | Environment dependent interaction potential215 with ZBL | Defect analysis |
 McKenna et al.216 | Graphite | 2 keV | 24 a\(\times\) 39 a \(\times\) 15 a, 112,320 atoms | 5 ps | Environment dependent interatomic potential developed by Marks et al.215 combined with ZBL | Defect analysis considering PKA energy scaled by threshold energy |
 Christie et al.38 | Graphite | 0.1–2 keV | 15.77 \(\times\) 15.77 \(\times\) 15.77 nm3, 440,448 atoms | 5 ps | Environment dependent interatomic potential developed by Marks et al.215 combined with ZBL | Cascade structure study, atoms kinetics, PKA length |
 Fu et al.217 | W and W-Re | 1-300 keV | 63 nm \(\times\) 63 nm \(\times\) 63 nm | 100 ps | Finnis-Sinclair type potential218 with ZBL | Defect analysis, cluster size analysis, dislocation loop analysis |
 Zhang et al.219 | BCC W | 10–50 keV | 31.652 nm \(\times\) 31.652 nm \(\times\) 31.652 nm, 2 million atoms | 90 ps | Finnis-Sinclair49 type with Derlet–Nguyen–Manh–Dudarev (DNMD)52 W Potential with ZBL | Defect analysis and role of grain boundaries |
 Setyawan et al.220 | W | 0.1-100 keV | 38 nm \(\times\) 38 nm \(\times\) 38 nm (120 times a0) | 50 ps | W potential54 modified from Ackland et al. N-body semi-empirical potential50 | Defect clusters, self-interstitial atom loops |
 Liu et al.112 | W | 1–200 keV | 150 a\(\times\) 150 a \(\times\) 150 a, a = 3.185 Å, 8.1 million atoms | 150 ps | neuroevolution potential (NEP) combined with ZBL using the Gaussian approximation potential (GAP) data from113 | Potential development, defect analysis and cluster analysis |
 Ullah et al.221 | Ni0.8Fe0.2 and Ni0.8Cr0.2 | 5 keV | 11.5 nm\(\times\) 11.5 nm \(\times\) 11.5 nm, 132,000 atoms | 30 ps | EAM potential by Bonny et al.141 | Defect analysis as a function of dose (dpa), cluster analysis |
 Zhou et al.222 | Monocrystalline S | Up to 5 keV | 19.1 nm\(\times\) 19.1 nm \(\times\) 16.3 nm, 448,000 atoms | 50 ps | Tersoff potential206 with ZBL | Temperature and strain effects on defect production |
 Boev et al.12 | V-Ti alloys | 5–20 keV | 12 nm\(\times\) 12 nm \(\times\) 12 nm, 432,000 atoms | 12 ps | EAM potential by Lipnitskii et al.223 combined with ZBL | Defect and cluster analysis |
 Voskoboinikov et al.224 | Al | 5–20 keV | 4 million atoms | ~15 ps | EAM potential by Zope et al.225 with ZBL | Defect and cluster analysis, near surface cascades |
 Roy et al.5 | Ti alloys | 10-40 keV | 20 nm \(\times\) 20 nm \(\times\) 20 nm | 20 ps | EAM potentials by Zhou et al.226 with ZBL | Defect and cluster analysis |
 Sahoo et al.34 | β-Li2TiO3 | 2 keV | 8 a × 8 a × 8 a | 100 ps | long-range Coulombic potential, and medium range Buckingham potential with ZBL | Defect and cluster analysis, amorphization analysis |
 Parashar et al.227 | Single crystal Nb | 0.25–2 keV | 128,000 atoms | 6 ps | Force matched EAM potential by Fellinger et al.228 | Radiation effect on tensile strength, temperature effect on radiation damage |
 Zarkadoula et al.27 | NixFeyCr(100-x-y) alloys | 30–50 keV | 2.5–3.6 million atoms | 100 ps | embedded-atom (EAM) potential by Bonny et al.141 for Ni-Fe-Cr alloys | Effect of inclusion of electronic effects and 2 temperature model in cascade simulations |
 Nordlund et al.229 | Cu and W | Up to 100 keV | - | 50 ps | Addressing limitations of Norgett−Robinson−Torrens displacements per atom (NRT-dpa) model, two new complementary displacement production estimators (athermal recombination corrected dpa, arc-dpa) and atomic mixing (replacements per atom, rpa) functions | |
 Granberg et al.231 | Ni-Fe and Ni -Co-Cr | simulations up to the dose ∼ 0.57 dpa by running 1500 consecutive 5 keV recoils | 110,000 atoms | 30 ps | Zhou et al.226, EAM potentials for Ni-Co and Lin et al.232 EAM for Cr | point defect damage level saturation with a dose at about 0.3 dpa, defect and cluster analusis in NiFe and NiCoCr |
 Lin et al.26 | NiCoCrFe HEA | 10–50 keV | 100 a\(\times\) 100 a \(\times\) 100 a, a = 3.52 Å, 4 million atoms | 140 ps | Defect evolution and cluster analysis, Cascade temperature analysis, dislocation analysis |