Fig. 3
From: Spin–orbit coupling in silicon for electrons bound to donors
Evolution of spin-relaxation rates with electric field. a, b Modelled electrostatic potential and electric field in the nanoelectronic device, showing a dominant field (Ey ≃ 5 MV/m) along GSET − GT. c Electric field dependence of spin-relaxation rates, consistently describing donor qubits in the bulk (Ey = 0) and in nanoelectronic devices (Ey > 0)
