Fig. 4
Process Matrix of the SWAP1/2 gate based on graphene surface plasmons. a Simulated process matrix of the SWAP1/2 gate at 93.3% process fidelity for W = 5 nm and EF = 0.335 eV, with a lifetime of 500 fs. The axis label corresponds to the product of the Pauli operators used to construct the two-qubit basis, as defined in the Methods section. Note that we only plot the magnitude of the process matrix elements. b Residual between the simulated and ideal process matrices (||χideal| − s|χsim||) at the point of maximum fidelity
