Fig. 2: Impact of post-bonding indium bump height on coupling rate and coherent and incoherent simulated gate errors.
From: Entanglement across separate silicon dies in a modular superconducting qubit device
The fit parameters in (a) are a = 27.9 ± 6.4 MHz μm and b = 0.7 ± 3.5 MHz. The discrepancy between measurement and simulation and details on bump height measurements are discussed in the Methods section. There are only two distinct entangled qubit pairs in the designed Hamiltonian, the II–III and I–IV pairs as shown in Fig. 1b, both of which are simulated in (b). Error bars represent the measurement uncertainty on the bump height (x-axis) and coupling rate (y-axis).
