Fig. 1: Conceptual diagram of random dipole model and trap model.
From: Anisotropy with respect to the applied magnetic field of spin qubit decoherence times
a and b A charge moves back and forth between bistable potential wells in the random dipole model while between the Fermi surface of a conductor and a trap of an insulator in the trap model. The screening effect of metallic gates can be taken into account by adding image charges to the conductor. c and d Resultant image dipole and image trap are depicted as red dashed arrows respectively.
