Fig. 1: Schematics of a gate-defined quantum dot in a planar germanium heterostructure.
From: Modeling of planar germanium hole qubits in electric and magnetic fields
The quantum dot is confined in the z-direction by the SiGe-Ge-SiGe layers, and the Ge quantum well has width dw = 18 nm. The insulating oxide layer has width dox = 5 nm. The in-plane confinement is created by the electrostatic gates, which are located at the top of the heterostructure. Our model assumes a uniform electric field in the z-direction and a parabolic potential in the xy-plane. The potential profile along the dashed line is plotted in Fig. 2A. The illustration of the accumulated hole wave function is colored in green.
