Fig. 4 | npj Quantum Materials

Fig. 4

From: Rewritable ferroelectric vortex pairs in BiFeO3

Fig. 4

Capacity of vortex structure to be memory device. a1 Original domain structure with white circle indicating the poling point. a2 Domain structure after polarized. a3 The domain structure after erase operation. b Original and c polarized domain pattern, with two-point polarization apart from 167 nm (+10 V DC, 20 s tip electrical pulse) poling condition

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