Fig. 1
From: Gated tuned superconductivity and phonon softening in monolayer and bilayer MoS2
Crystal structure, device geometry, and gate-induced superconductivity of monolayer and bilayer MoS2 EDLT devices. a Crystal structure of 2H-MoS2, where the interlayer spacing is 0.615 nm. b Optical microscope image of a typical bilayer MoS2 EDLT device. Scale bar: 20 μm. c Schematic illustration of an atomically thin MoS2 EDLT device. The labels of S and D represent source and drain electrodes, respectively. d Typical ambipolar transfer curves obtained from a bilayer MoS2 EDLT device at 220 K (blue: forward direction; red: backward direction). V DS was fixed at 10 mV. e, f T-dependent R s of bilayer (e) and monolayer (f) MoS2 devices at different perpendicular magnetic fields showing gate-induced superconductivity
