Fig. 3
From: Gated tuned superconductivity and phonon softening in monolayer and bilayer MoS2
Vortex dynamics analysis of monolayer and bilayer MoS2. a and b show the Arrhenius plot of the sheet resistance of two typical bilayer and monolayer MoS2 EDLTs at different perpendicular magnetic fields, respectively. The dashed lines show the guide-to-eye fit of the thermally activated behavior, and the arrows show the deviation of the thermally activated regimes. c Semilogarithmic plot of the activation energy, U(H)/k B, as a function of magnetic field for both monolayer and bilayer devices. U(H)/k B data were extracted from fittings in Fig. 3a, b. The solid line is a fit to the formula U(H) = U 0ln(H 0/H). Inset: the magnetic field dependence of R s at 0.3 K with a fit obtained by using a model developed by Shimshoni et al.30 and Saito et al.17 d Vortex phase diagram of the bilayer and monolayer (inset) MoS2 EDLT devices. The solid circles represent H c2 at different temperatures, and the solid squares were extracted from the deviation points as shown in a and b (depicted by the black arrows). The solid squares divide the thermally activated flux flow (TAFF) and quantum creep regimes
