Fig. 1
Lateral electrical transport with temperature and gate-voltage sweep. a A schematic of a top-gated TI/(Ga,Mn)As Hall-bar device. b An optical microscopic image of a Hall-bar device (650 × 400 μm2) with false-colored Au gate metal and the measurement description. c Temperature dependence of the longitudinal sheet resistance Rxx of (Bi,Sb)2(Te,Se)3/(Ga,Mn)As heterostructure channel (black circles) and of only (Ga,Mn)As channel (red circles). Inset is a schematic of device and measurement description of (Ga,Mn)As layer. d Rxx of (Bi,Sb)2(Te,Se)3/(Ga,Mn)As heterostructure in the low temperature regime. Inset is a schematic of device and measurement description of the heterostructure. e Gate-voltage dependence of the longitudinal sheet resistance Rxx with zero magnetic field at different temperatures from 0.1 K (red) to 10 K (black). f Inverse of Hall resistance Rxy in the unit of 2D carrier concentration at 3 K. Inset is the results of Hall measurements with different gate voltages from 1 to −5 V at 3 K
