Fig. 3
Quantum corrections to MC. a, b MC at different applied gate voltage (VG) at T = 0.1 K and T = 0.29 K, respectively. A crossover from negative MC (WAL) to positive MC (WL) is observed as VG decreases from 1 to −5 V. c A similar crossover is observed in the temperature range 0.1–3.0 K at VG = −5 V. d, e Gate-voltage dependence of the prefactor α1 for the bottom surface obtained by fitting the MC in d at T = 0.1 K (red circles) and T = 0.29 K (green squares) to Eq. (1). f A cartoon of the band diagram of the bottom surface interfaced with (Ga,Mn)As. The magnetic gap (Δ) is fixed at a particular temperature as the chemical potential is varied from the conduction band toward the energy gap as the gate voltage decreases from +1 V toward −5 V. g Temperature dependence of the prefactor α1 with VG = −5 V (black triangles). h A cartoon of the band diagram of the bottom surface of the TI as the temperature is decreased at a fixed gate voltage. Error bars represent an uncertainty with 95% confidence
