Fig. 4
Anomalous Hall effect. a Magnetic field dependence of the Hall resistance Rxy at different VG at T = 0.1 K. The slope changes sign, indicating a change in carrier type from n- to p-type as the gate voltage is varied. b Magnetic field dependence of the Hall resistance Rxy at T ≤ 1.0 K at fixed VG, showing that the AHE becomes more pronounced as temperature decreases. c Gate-voltage dependence of the magnitude of the anomalous Hall resistance \(R_{xy}^0\) at T = 0.1 K (red circles). The inset shows the anomalous Hall resistance \(R_{xy}^{AH}\) at different VG: 1 V (red), 0 V (orange), −1 V (green), −3 V (cyan), and −5 V (blue). d Temperature dependence of \(R_{xy}^0\) with VG = −5 V. The inset shows \(R_{xy}^{AH}\) at T = 3.0 K (black), 1.0 K (violet), 0.6 K (blue), 0.4 K (cyan), 0.29 K (green), and 0.1 K (red). Error bars represent an uncertainty with 95% confidence
