Fig. 2 | npj Quantum Materials

Fig. 2

From: Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching

Fig. 2

Hall resistance, carrier density, and resistance of the ∼3 nm CBS film. a, b Hall resistance as a function of the magnetic field at T = 300 and 200 K for the \(P_r^ +\) and \(P_r^ -\) states of the PMN-PT substrate. c, d Temperature dependence of the charge-carrier density and resistance of the CBS film for the \(P_r^ +\) and \(P_r^ -\) states of the PMN-PT substrate. e, f Schematic band diagrams of the Fermi level shift induced by polarization switching

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