Fig. 3: Tuning the energies of the domain wall states.
From: Tuneable topological domain wall states in engineered atomic chains
a Energies (w.r.t. the on-site energy) of the trimer chain in-gap states depending on the hopping t3 calculated with a tight-binding model with t1 = 0.14 eV, t2 = 0.04 eV. The shaded areas indicate the three bands of the bulk trimer chain and the dashed vertical line marks t3 = t2. b Experimental realizations of modulating the hopping t3 into the domain wall site (t3 = 0.04; 0.07; 0.14 eV). The panels are labeled with the strength of the hopping. In each case, we show STM topography (top, set-point 0.5 V/1 nA), dI/dV map acquired at a bias close to the in-gap state (3.45, 3,48, and 3.38 V, respectively) and the corresponding simulated LDOS map. Scale bars, 2 nm. c Comparison between the simulated LDOS maps in the case t3 = 0.14 eV and the experimental constant-height dI/dV maps as a function of energy. The red arrow marks the energy of the in-gap state.
