Fig. 2: Ubiquity of the sub-band structure in differently grown doping profiles.
From: The sub-band structure of atomically sharp dopant profiles in silicon
Fermi surface and electronic structures along the kxy and ky directions for a Si:P δ-layer grown with a P concentration a slightly less than 1/4 monolayer (ML), b more than 1/4 ML, and c by depositing P and Si together such to form a thicker layer (≈1.5nm) with a similar (≈25%) doping concentration. Blue, red, and yellow lines to serve as a guide for the eye. ARPES measurements are performed using hν=36eV13,15.
