Fig. 2: Strain modulation of the Mott transition.
From: Nano-imaging of strain-tuned stripe textures in a Mott crystal
a Two-probe electrical resistance of the crystal in Fig. 1 across the insulator-metal transition under compressive (\(\varepsilon \,<\, 0\)) and tensile (\(\varepsilon \,>\, 0\)) b-axis strain conditions; the overall resistive transition shifts in temperature. Crystallographic axes are labeled on eight rendered unit cells of the crystal structure. b Insulator-metal transition temperature TMIT (identified by a peak in \(R^{ - 1}dR/dT\)) identified versus applied b-axis strain. c Areal metallic phase fraction at T = 95 K identified by repeatedly nano-imaging along the line identified in Fig. 1c versus in situ applied strain; phase fractions can be modulated by 40% under a 2% variation in strain. Small arrows indicate the strain sweep sequence. d Spatially resolved insulator-metal nano-texture along the same scan line quantified in (c) versus dynamically tuned strain; beginning from an unstrained state (bottom) metallic domains enlarge under \(\varepsilon = - 1\)% compressive strain, then diminish under \(\varepsilon = + 1\)% tensile strain, and can be reversibly restored under renewed compressive strain.
