Fig. 4: Signatures of emergent Mott domain susceptibility.
From: Nano-imaging of strain-tuned stripe textures in a Mott crystal
a T-dependent metallic fraction f from Fig. 3a together with thermal susceptibility \(\chi _{{\mathrm{therm}}}{ = {\mathrm{d}}f/{\mathrm{d}}T}\) (orange); circular points quantify the elastic susceptibility \(\chi _{{\mathrm{elas}}}{ = {\mathrm{d}}f/{\mathrm{d}}}\varepsilon\) identified at similar temperatures from Fig. 3c–f. b Phase-field simulations and (c) a semi-analytic model of domain evolution both predict the characteristic temperature dependence of \(\chi _{{\mathrm{therm}}}\) and \(\chi _{{\mathrm{elas}}}\). d An anomalous peak in elastoresistance \(\eta\) emerges in the phase coexistence regime of the thermal transition; gray markers indicate experimental data whereas the colored curve is a guide to the eye; ins. and coex. respectively indicate insulating and phase-coexistent temperature regimes. e A simple circuit model allows to (f) predict \(\eta\) based on the elastic susceptibility inferred from (a) for the same insulator-metal mixture observed by nano-IR imaging (see text).
