Fig. 2: The accurate model in analyzing the dark current.

a Simulated and measured results of dark current and photocurrent. b Total dark current and dominant components for HgCdTe APD. c Simulated I–V curves with various doping concentrations of n− layer. Insets show IV curves at high bias and the electric field for different doping concentrations at −11 V, respectively. d Simulated dark current as a function of voltages with different n− layer thicknesses.