Fig. 4: Electric field tunability of the superconducting state.
From: Tunable two-dimensional superconductivity and spin-orbit coupling at the EuO/KTaO3(110) interface
a Temperature-dependent sheet resistance at different gating voltage (VG). Inset: photograph of the device used in the gating process. It was fabricated into a six-probe Hall bar configuration. b VG-dependent onset and midpoint of Tc. c VG-dependent carrier density ns and Hall mobility μ measured at T = 3.8 K. d VG-dependent Pauli limit (μ0HP), in-plane upper critical field (\(\mu _0H_{{{{\mathrm{c}}}}2}^{//{{{\mathrm{ab}}}}}{{{\mathrm{ }}}}\)), and spin-orbit energy (εso). Inset: VG-dependent out-of-plane upper critical field (\(\mu _0H_{{{{\mathrm{c}}}}2}^{//{{{\mathrm{c}}}}}{{{\mathrm{ }}}}\)). e VG-dependent GL coherence length (ξGL) and superconducting layer thickness (dsc). f The spin-orbit energy-dependent midpoint of Tc (\(T_{{{\mathrm{c}}}}^{{{{\mathrm{mid}}}}}\)). The purple dashed line is a linear fit to the data at VG < −80 V.
