Fig. 6: Origin of the anomalous power law in the conventional magnetoresistivity.
a Contour plot of the exponent n in the power-law dependence of the magnetoresistivity on the magnetic field (μ0H), \({\rho }_{{{{\rm{xx}}}}} \sim {({\mu }_{0}H)}^{n}\), evaluated after inverting Eq. (3) and for the ratio among carrier mobilities μh/μe ranging from ~0 to 1. μh and μe stand for hole and electron mobilities, respectively. Here, μ0H0 ≈ 1/μe ≈ 0.8 T, which corresponds to magnetic fields ranging from 0 to 32 T. b Calculated resistivity ρxx as a function of the external magnetic field for different values of the ratio μh/μe. For panels (a) and (b), we chose nh/ne = 0.75. c Contour plot of n in the μ0H - nh/ne plane. It is clear that a marked difference in carrier mobilities, when coupled to even a small imbalance in carrier densities, can favor n ≤ 1. d Calculated resistivity ρxx as a function of the magnetic field for different values of the ratio nh/ne. For panels (c) and (d), we choose μh/μe = 0.50.
