Fig. 6: Charge modulation contrast reversal in ScV6Sn6 away from Fermi level.
a, b STM topographs acquired at opposite bias polarities, drift-corrected and aligned to be over the exact same area with atomic-registry. Small black and red squares in (a, b) mark an identical region of the sample in the two topographs. c, d Zoom-in over the two small squares in (a, b), and (e, f) Fourier-filtered (FT-filtered) images that only contain the CO Fourier peaks. Triangles in (c, f) mark the same location of the sample connecting three dark checkers (dashed line) or three bright checkers (solid line). g Differential conductance dI/dV(r, V) maps at different bias showing contrast reversal between +40 mV and +100 mV bias. Importantly there is no contrast reversal between –40 mV and +40 mV maps. STM setup conditions: (a, c) Iset = 50 pA, Vsample = –200 mV; (b, d) Iset = 100 pA, Vsample = 200 mV; (g) Iset = 100 pA, Vsample = 100 mV, Vexc = 2 mV. Scale bars correspond to: (a, b) 4 nm.
