Fig. 4: Hall effect of La3ScBi5.
From: Quasi-linear magnetoresistance and paramagnetic singularity in hypervalent bismuthide
a Field dependence of Hall resistivity ρyx(B) at various temperatures. Inset: The temperature dependence of R0(T). A diagram of the Hall bar is shown, where I+ and I- are a pair of current leads, and V+ and V- are a pair of voltage leads, with H // a, I // c, and V // b. b The calculated field dependence of Hall resistivity at T = 2 K. Inset: The experimental field dependence of Hall resistivity at T = 2 K. c ρyxα ρ0 versus H/α ρ0. ρ0 is derived from ρ|| (T, H = 0) data. Inset: The temperature dependence of α. d Conductivity and Hall conductivity of La3ScBi5 at T = 2 K, the black line represents the fitted line using the multi-band model.
