Fig. 2: Mechanisms underlying the light-induced dark conductivity increase and boron doping activation. | Nature Energy

Fig. 2: Mechanisms underlying the light-induced dark conductivity increase and boron doping activation.

From: Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells

Fig. 2

a, H− profiles of i-a-Si:H and p-a-Si:H before and after 30 min annealing at 180 °C. Here IWO is a transparent conductive layer. b, Schematic hydrogen movements (indicated by black arrows) and relative binding configurations of the Bi–Si site, as inferred from the calculation of migration barriers. Yellow, silicon; magenta, boron; cyan, hydrogen. c, Energy barriers of hydrogen movements, each case has 30 data points calculated from different doping sites of boron atoms. The energies in the inset are in comparison to state A, as illustrated in b. The error bars are standard deviations. d, Injection-dependent τeff of p-a-Si:H/i-a-Si:H/n-c-Si/i-a-Si:H/p-a-Si:H (right) and i-a-Si:H/n-c-Si/i-a-Si:H (left) before and after 2 h light soaking under 1 sun illumination, as well as that after 15 min annealing at 180 °C (before which they are light soaked). τeff at injection level >1.0 × 1015 cm−3 is fitted using Olibet and colleagues' model47. The inset shows the PFF of complete SHJ solar cells before and after 2 h light soaking under 1 sun illumination, as well as that after 15 min annealing at 180 °C (before which they are light soaked). The top lines, bottom lines, lines in the box, circles and boxes represent maximum values, minimum values, median values, mean values and 25–75% distributions, respectively. e, Transient absorption signals of p-a-Si:H before (left) and after (right) 2 h light soaking under 1 sun illumination, the fitting is based on the one-dimensional recombination and diffusion model.

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