Fig. 3: Direct evidence of weakly bound hydrogen atoms in p-a-Si:H and the impact on the light-induced dark conductivity increase. | Nature Energy

Fig. 3: Direct evidence of weakly bound hydrogen atoms in p-a-Si:H and the impact on the light-induced dark conductivity increase.

From: Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells

Fig. 3

a, Sample preparation for measurements of TOF-SIMS, FTIR and current–voltage characteristics. After etching the IWO layer with an aqueous solution of HCl, p-a-Si:H on silicon is used for TOF-SIMS and FTIR characterizations, while p-a-Si:H on quartz glass is used for current–voltage characterization using the transfer-length-method structure. b,c, TOF-SIMS signals (b) and FTIR spectra (c) of p-a-Si:H after 0 min (blue) and 2 h annealing at 180 °C (red). d, Enhancement of dark conductance after 2 h light soaking under one sun illumination, plotted as a function of annealing time at 180 °C, where σdark0 and σdark are dark conductance before and after the 2 h light soaking under 1 sun illumination. The two dashed circles correspond to p-a-Si:H films in b and c.

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