Fig. 5: Reversible behaviour of the light-induced dark conductivity increase and boron doping activation. | Nature Energy

Fig. 5: Reversible behaviour of the light-induced dark conductivity increase and boron doping activation.

From: Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells

Fig. 5

a, Evolutions of the FF (compared with the initial FF before light soaking) in alternating cycles of 180 min 1 sun illumination and 720 min sleeping in the dark. The cell size is 15.6 cm × 15.6 cm. b, Decay of FF in 10 min at different temperatures, the LS states are light soaked under 60 sun illumination for 70 s, followed by 25 min dark ‘sleeping’. The error bars, boxes and points in the boxes are standard deviations, 25–75% distributions and mean values respectively. The curves are normal distributions. c, Fitting of equation (3) to the τWW (blue circles) derived from experimental average ΔFF in b, the red circle is picked from Supplementary Table 1 measured at 25 °C, where the error bar stems from the standard error during the fitting process of τWW. The activation energy Ea ≈ 0.399 eV is calculated from the slope of the fitting line. Here Ea is related to the energy barrier of hydrogen movements between Si−Si bonds. d, Typical Ea of intrinsic and doped a-Si:H materials. The numbers along the x-axis are reference numbers. The error bars on mean values are standard deviations taken from refs. 42,44.

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