Fig. 2: Electron microscopy analysis of the device structure. | Nature Energy

Fig. 2: Electron microscopy analysis of the device structure.

From: High-concentration silver alloying and steep back-contact gallium grading enabling copper indium gallium selenide solar cell with 23.6% efficiency

Fig. 2

a,b, SEM images of the full cross-section of the complete champion cell (a) and the absorber surface after selectively removing the CdS and window layers via HCl etching (b). The 2 µm scale bar refers to both panels a and b. c, BF-TEM images of the full cross-sections of the solar cell for the two lamellae investigated. The areas for which the elemental distribution was analysed by scanning (S)TEM-EDS are highlighted with red boxes (‘Pos1.x’, lamella 1; ‘Pos2.x’, lamella 2). A schematic of the solar cell cross-section is illustrated between the two lamellae. The ZnO:Al film is abbreviated as AZO.

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