Fig. 1: Chiral non-collinear AFM JJs.

a, Scanning electron micrographs of the fabricated JJs, consisting of a triangular chiral antiferromagnetic Mn₃Ge (40-nm-thick) spacer and multiple superconducting Nb (50-nm thick) electrodes. These Nb electrodes are laterally edge-to-edge separated by 28–119 nm from each other (bottom). The upper scale bar is 3 µm, lower scale bars are 0.5 µm. Note that the 5-nm-ultrathin Ru underlayer serves as a buffer layer (Methods). b,c, Crystal structure (b) and 120^o chiral antiferromagnetic configuration (c) of D0₁₉-Mn₃Ge. Two layers of Mn and Ge atoms are stacked along the c axis (// z axis) where red and black circles (blue and grey) represent Mn and Ge atoms lying in the z = c/2 (z = 0) planes, respectively. The probable antiferromagnetic configurations are presented in c when an external magnetic field is applied along \([{2\bar 1\bar 10}]\) (left) and \([{0\bar 110}]\) (right). In each layer, Mn atoms form a Kagome-type lattice and their magnetic moments (blue or red arrows) constitute a 120° antiferromagnetic structure. The orange arrows indicate a weak uncompensated magnetization.