Extended Data Fig. 9: SEM images for a psh-DPP-2gT (εps = 100%) films and gm /Ion for psh-DPP-2gT (εps = 100%) OECTs based on Ecoflex/SEBS bilayer substrates.
From: Highly stretchable organic electrochemical transistors with strain-resistant performance

(a) SEM images for a psh-DPP-2gT (εps = 100%) under 0%, 40%, and 80% strains. Note obvious Au line rupture when the h-film remains connected. (b) gm /Ion for psh-DPP-2gT (εps = 100%) OECTs based on Ecoflex/SEBS bilayer substrates under various strains (from 0% to 200%) in ε┴ or ε// direction. The insert is the optical image of the stretched OECT device.