Extended Data Fig. 2: Atomic force microscopy (AFM) measurements.
From: Highly stretchable organic electrochemical transistors with strain-resistant performance
(a) Atomic force microscopy (AFM) images and (b) corresponding line cuts of the indicated DPP-2T and DPP-g2T d- and h-films. (c)The scheme of calculated thickness of h-films. The average film thickness and wall loading of h-films were calculated from the AFM software. Transferred d-films are relatively smooth with RMS roughness (σRMS) = 0.75 nm (d-DPP-2T) and 0.89 nm (d-DPP-g2T). For the transferred h-films, h-DPP-g2T exhibits a uniform honeycomb structure with an average pore diameter of 1.33±0.15 μm and wall height of 183±34 nm. In contrast, the h-DPP-2T films exhibit very non-uniform craters of diameters ranging from 1.3~3.6 μm (average = 2.14±0.83 μm) and wall height of 322±86 nm.
