Extended Data Fig. 7: Doping of a p(g1T2-g5T2) OECT at lower drain bias.
From: Hole-limited electrochemical doping in conjugated polymers
At a lower drain-source bias (VDS = −0.1 V), the meeting point of the doping fronts in operando measurements of OECTs moves closer to the centre of the channel compared to the OECT operated at VDS = −0.6 V (Fig. 4d in the Main Text). Vertical dashed lines indicate the source (S) and drain (D) contacts.
