Extended Data Fig. 9: OECT rise times for varied initial gate voltages.
From: Hole-limited electrochemical doping in conjugated polymers
The drain current rise times were measured from transitions from varied initial gate voltage (VG,i) to the fully doped state (VG,f = −0.6 V) for p(g1T2-g5T2) OECTs (L = 800 µm, W = 100 µm, VDS = −0.6 V). Drain-source currents are normalized between 0.0 and 1.0 for ease of comparison.
