Fig. 3: Electric field sensitivity and coherence dependence on magnetic field orientation. | Nature Materials

Fig. 3: Electric field sensitivity and coherence dependence on magnetic field orientation.

From: Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

Fig. 3

a, Pulse sequences used to measure the voltage sensitivity of the energy splitting ∂fQ/∂Vi. A positive (negative) voltage pulse δVi of varying length tZ is applied to the test gate electrode i in the first (second) free evolution of a Hahn echo to extract fQ/∂Vi. b, Pulse sequences used to infer the sign of ∂fQ/∂Vi by assessing the shift in the qubit resonance frequency as a result of a voltage pulse δVi. c, Left: spin-up probability P(tZ) as reflected by the charge sensor current Isensor as a function of the pulse length tZ, where the solid line is a fit to the data points. Right: fast Fourier transform (FFT) of Isensor, enabling the extraction of fQ/∂Vi. d, Isensor as a function of the drive frequency fX and δVi. The shift in the resonance frequency enables the sign of ∂fQ/∂Vi to be extracted. e, The qubit energy splitting sensitivity to a voltage change on the plunger gate ∂fQ2/∂VP2, as a function of different magnetic field orientations ϕB and θB. B is adapted to keep fQ2 constant at fQ2 = 1.36(7) GHz. Data acquisition is hindered for the white areas as a result of limited qubit readout or addressability for these magnetic field orientations (the exact filed orientations of which are given in Supplementary Table 1). f, Hahn coherence time \({T}_{2}^{\,{\rm{H}}}\) as a function of the qubit frequency fQ2, for different magnetic field orientations indicated by the coloured markers in e. Solid lines correspond to \({T}_{2}^{\,{\rm{H}}}\) as extracted from a pure decay, whereas dotted lines correspond to \({T}_{2}^{\,{\rm{H}}}\) as extracted from the envelope of the nuclear spin-induced collapse and revival. Data indicated by opaque markers are used to fit the power law dependence of \({T}_{2}^{\,{\rm{H}}}\). g, Expected \({T}_{2,{\,{{f}}}_{{{{\rm{Q}}}}2}\, =\, 1\,{{{\rm{GHz}}}}}^{\,{\mathrm{H}}}\) as extracted from a power law fit to the opaque data markers in f as a function of the gate voltage sensitivity (∂fQ2/∂VP2)/fQ2 from e. The coloured markers correspond to the different magnetic field orientations as indicated in e. The solid black line is a fit of \({T}_{2}^{{\mathrm{H}}}=a{x}^{\beta }\) to the data, yielding a scaling factor of a = 2.4 and an exponent of β = −1.04(8).

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