Fig. 4: Reconstruction of \(\partial\;{\overleftrightarrow{g}}/\partial {V}_{i}\) for differently oriented electrostatic gates.

a–c, Relative voltage sensitivity of the energy splitting (∂f_Q2/∂V_i)/f_Q2 of Q2 for a voltage excitation applied to gates P2 (a), B2 (b) and B12 (c). Top panels correspond to sweeps of the magnetic field elevation θ_B, whereas bottom panels correspond to sweeps of the in-plane angle ϕ_B. The solid lines correspond to projections of the \(\partial\;{\overleftrightarrow{g}}/\partial {V}_{i}\) fitted to the data. d, Schematic illustration of the qubit layout indicating the different electrostatic gates. e–g, Relative Rabi frequency of (∂f_Rabi/∂V_i)/f_Q2 of Q2 for a drive voltage excitation V_i applied to gates P2 (e), B2 (f) and B12 (g). Solid lines correspond to the projection of the \(\partial\;{\overleftrightarrow{g}}/\partial {V}_{i}\) as fitted to the data in panels a–c. h–j, Cross-section of the change in \({\overleftrightarrow{g}}\) in the x–y, x–z and y–z planes of the magnet frame when applying a voltage pulse of 0.1 V on gates P2 (h), B2 (i) and B12 (j), with respect to the normal operation voltage V₀. Dotted lines correspond to the cross-sections of \({\overleftrightarrow{g}}\), whereas solid lines represent \(\begin{array}{l}{\overleftrightarrow{g}}+\delta\;\,{\overleftrightarrow{g}}_{{i}}\,\left(0.1\,{\mathrm{V}}\right)\end{array}\).