Extended Data Table 1 Description of \({{\partial\;}}{{\overleftrightarrow{\boldsymbol{g}}}}/{{\partial}} {\boldsymbol{V}}_{\boldsymbol{i}}\) of Q2 for a potential applied to gates P2, B2, and B12

From: Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

\(\partial\;{\overleftrightarrow{g}}/\partial {V}_{i}\)

P2

B2

B12

ϕ/∂Vi (mrad  mV−1)

-0.11(2)

1.3(2)

-3.1(1)

θ/∂Vi (mrad  mV−1)

0.0008(5)

0.005(4)

0.028(3)

ζ/∂Vi (mrad  mV−1)

0.04(2)

-2.3(1)

2.2(1)

\(\partial {g}_{{x}^{{\prime} }}/\partial {V}_{i}\) (mV−1)

0.000181(9)

-0.00028(7)

-0.00073(6)

\(\partial {g}_{{y}^{{\prime} }}/\partial {V}_{i}\) (mV−1)

0.000507(3)

0.00037(2)

-0.00146(2)

\(\partial {g}_{{z}^{{\prime} }}/\partial {V}_{i}\) (mV−1)

0.0045(1)

-0.0001(8)

-0.0071(7)

  1. Overview of the parameters describing the voltage-induced deformation of \({\overleftrightarrow{g}}\). Three Euler angles ∂ζ/∂Vi, θ/∂Vi, and ∂ϕ/∂Vi describing the rotation, as well as changes to the principle g-factors \(\partial {g}_{{x}^{{\prime} }}/\partial {V}_{i},\partial {g}_{{y}^{{\prime} }}/\partial {V}_{i}\), and \(\partial {g}_{{z}^{{\prime} }}/\partial {V}_{i}\), for Q2.