Extended Data Fig. 10: The variability of short-channel 2D Bi2O2Se/Bi2SeO5 GAAFETs.
From: Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration
a, The transfer characteristic of 6 individual short-channel 2D GAAFETs with gate length of 30 nm. b–f, The statistical histogram of Gm,max (VDD = 0.5 V) (b), SS (c), on-state current (d), Vth (e), and on-off ratio (f).
