Extended Data Fig. 4: Contact resistance for 2D Bi2O2Se/Bi2SeO5 GAAFET.
From: Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration
a–m, Output curves for channel lengths ranging from 30 nm to 4900 nm. n, Transfer length model plot of total resistance (Rtotal) versus channel length (Lch) from 2D Bi2O2Se/Bi2SeO5 GAAFETs. The lines represent linear fit to data and the extraction of contact resistance (Rc) was expressed in the following equation: Rtotal = Rch + 2Rc, where Rch is channel resistance, Rtot is the total resistance.
