Extended Data Fig. 4: Magnetoresistance and hysteresis in a spatially adjacent non-superconducting region with angle 1.44° at T= 20 mK.
a, Lineslice of longitudinal resistance Rxx as a function of bottom gate voltage VBG (the top axis indicates the filling factor v) in device A for a spatially adjacent probe that does not show superconductivity but shows the characteristic dip in Rxx, which drops to a small non-zero value. The motivation is to look for hysteresis at the same dopings that show Rxx = 0 for the spatially adjacent superconducting probes in the same device. The dashed lines identify the dopings at which the following magnetoresistance measurements are done. The triangles green, yellow, and red represent a hole-doped bias, a charge neutrality bias, and an electron-doped bias respectively. b, c, d, The longitudinal resistance Rxx and magnetoresistance (MR = [Rxx(B) − Rxx(B = 0)]/Rxx(B = 0)) as a function of in-plane magnetic field B∥ at dopings identified by the symbols on the upper-right corner. The arrows indicate the direction of the magnetic field sweep.
