Extended Data Fig. 2: Device schematic and optical micrographs.
From: Relativistic Mott transition in twisted WSe2 tetralayers
a, Schematic for the dual-gated AB–BA WSe2 devices. In addition to the cross-section shown in Fig. 1a, the control (CoG) and contact (CG) gates are shown separately. The contact gate heavily hole dopes the Pt-WSe2 contacts (grey) while the control gate turns off the WSe2 region outside the channel area that is covered only by the bottom gate. b,c, Optical micrographs of 3°- and 2.5°-twisted WSe2 devices, respectively. The dashed and dotted-dashed lines mark the bottom and top gate electrodes, respectively. The scale bar is 4 µm.
