Extended Data Fig. 5: Temperature dependent evolution of Ti-L fine structure. | Nature Materials

Extended Data Fig. 5: Temperature dependent evolution of Ti-L fine structure.

From: Giant photoconductance at infinite-layer nickelate/SrTiO3 interfaces via an optically induced high-mobility electron gas

Extended Data Fig. 5

(a) Comparison of bulk STO Ti-L3 fine structure at 300 K (RT) and around 115 K (LT). (b) Bulk STO Ti-L3 fine structure at intermediate temperatures from 300 K to around 115 K. (c) HAADF image at RT of the interface showing the interface unit cells. (d) Evolution of Ti-L3 t2g-eg splitting at the last STO unit cell (−1) on going from RT to LT. Error bars correspond to the pixel size in the EELS spectrum, that is, the minimum resolved measurement possible, +−0.025 eV. (e) Low temperature unit-cell resolved STEM-EELS Fine structure at the Ti-L3 edge on unit cells near the interface compared with a bulk unit cell. In summary, the temperature-dependent HR-STEM and EELS studies indicate a temperature-dependent electronic reconstruction at the very interfacial titanium site, that has a stronger out-of-plane parameter when compared from RT to ca. 115 K. However, charge quantification by EELS at low temperatures is similar to at RT, with an almost absence of Ti3+. A transition toward an AFD STO is structurally confirmed starting at a temperature below ca. 100 K.

Back to article page