Fig. 3: Evolution of the non-reciprocal response with changing chemical potential.
a, R versus Vg data of device 3, section 5, in a narrow range of Vg, in which the chemical potential was changed near the charge neutrality point (for a wider range of Vg, see Supplementary Fig. 11a). The peaks in R occur when the bottom of one of the quantum-confined subbands is crossed by the chemical potential; the coloured thin lines show seven individual Vg sweeps and the thick black line shows their mean. b, Mean \({R}_{2\omega }^{{\rm{A}}}\) values at Bz = 50 mT for various gate voltages in the range corresponding to that in a. The zero crossings of \({R}_{2\omega }^{{\rm{A}}}\) roughly correspond to the peaks and dips in R(Vg), and thereby are linked to the quantum-confined subbands. Error bars are defined using the standard deviation of ten individual B-field sweeps. c, Averaged \({R}_{2\omega }^{{\rm{A}}}({B}_{z})\) curves at various Vg settings, from which the data points in b were calculated (data points and curves are coloured correspondingly). The systematic change in the \({R}_{2\omega }^{{\rm{A}}}({B}_{z})\) behaviour as a function of Vg is clearly visible.
