Extended Data Fig. 6: Intrinsically stretchable phototransistor array with reduced channel lengths.
Intrinsically stretchable phototransistor array with reduced channel lengths. a, Schematic illustration of device fabrication using photolithography. b, Schematic illustration of the 5 × 5 phototransistor array. c, Photographic image of a 5 × 5 phototransistor array (left) and magnified image of a single phototransistor in the red-dotted box (right) (Lch = 10 μm, Wch = 1.5 mm). d, Simulation results showing the strain induced in the phototransistors at the applied strain of 30%. e, Photographic images taken during the photocurrent measurements at flat (left) and stretched (right) states. f, Cumulative data of normalized photocurrents measured during flat and stretched modes. g, Comparison between photocurrents of the phototransistors fabricated using shadow masking and photolithography.
