Extended Data Fig. 3: Strain and composition dependent change of device characteristics.

Strain and composition dependent change of device characteristics. Changes in the a, on-photocurrent, b, photoresponsivity, and c, photodetectivity of the phototransistors employing isQDSNs with various QD:PDPP2T:SEBS ratios, under various applied strains (Lch = 150 μm, Wch = 1.5 mm).